MBRF20H150CTG, MBR20H150CTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
150
V
Average Rectified Forward Current (Per Leg)
(Rated VR) TC
= 134
°C (Per Device)
IF(AV)
10
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
180
A
Operating Junction Temperature (Note 1)
TJ
?20 to +150
°C
Storage Temperature
Tstg
?65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
(MBR20H150CT)
?
Junction
?to?Case
?
Junction
?to?Ambient
(MBRF20H150CT)
?
Junction
?to?Case
RJC
RJA
RJC
2.0
45
2.5
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 5 A, T
C
= 25
°C)
(IF
= 5 A, T
C
= 125
°C)
(IF
= 10 A, T
C
= 25
°C)
(IF
= 10 A, T
C
= 125
°C)
vF
0.72
0.57
0.87
0.65
0.60
0.68
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
50
30
A
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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